Properties of Waveguides, Routing Structures and Switches Fabricated by Impurity Induced Layer Disordering,

Abstract

Since its discovery in 1981, the phenomena of impurity induced layer disordering (IILD), or intermixing, has received some attention because of its promise as a planar optically self aligned fabrication method for buried channel optical waveguide structures such as PIC or OEIC. The process is such that the intermixed region has a higher bandgap and hence lower index of refraction than the original structure permitting lateral index of refraction control via masks. originally seen in AlGaAs, the effect is now known to exist in three other laser related alloys, all of which contain graded Al-Ga layers and which preserve lattice matching after intermixing.

Document Details

Document Type
Technical Report
Publication Date
Jul 01, 1992
Accession Number
ADP008014

Entities

People

  • T. A. Detemple

Organizations

  • University of Illinois Urbana–Champaign

Tags

Communities of Interest

  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Circuits
  • Compound Semiconductors
  • Electronics
  • Fabrication
  • Impurities
  • Integrated Circuits
  • Metal Oxide Semiconductors
  • Networks
  • Optical Waveguides
  • Optoelectronic Devices
  • Photonic Integrated Circuits
  • Refraction
  • Refractive Index
  • Semiconductors
  • Waveguides

Fields of Study

  • Materials science

Readers

  • Integrated Circuit Design and Technology.
  • Semiconductor Device Technology
  • Wave Propagation and Nonlinear Chaotic Dynamics.

Technology Areas

  • Directed Energy