Room Temperature Stark-Ladder Transitions and Electro-Optic Bistability in GaAs/AlAs Superlattices with Different Miniband Widths,

Abstract

Recently, there has been an increasing interest in Wannier-Stark localization in superlattices for various advantages to photonic device applications such as optical modulators or bistable switching devices. To achieve a high on/off ratio bistable operation, which is based on a self-electro-optic-effect device (SEED), device improvement using a Fabry-Perot resonator and/or a reflective structure has been reported. However, for application to vertical transmission devices, it is important to enhance the oscillator strength of optical absorption in superlattice layers, which is associated with both electric field-induced blue shift of the absorption edge and additional absorption peak shifts by Stark-ladder transitions. In this paper, we report on a systematic study of room temperature Stark-ladder transitions in GaAs/AlAs superlattices with different miniband widths. We observed the highest quantum coherence of 11 periods in the wide-miniband superlattice. Furthermore, we show the dependence of electro-optic bistable properties on the oscillator strength of the Stark-ladder transitions.

Document Details

Document Type
Technical Report
Publication Date
Jul 01, 1992
Accession Number
ADP008015

Entities

People

  • K. Kawashima
  • K. Kobayashi
  • Ken Fujiwara
  • M. Sigeta
  • T. Yamamoto

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Absorption
  • Electric Fields
  • Integrated Circuits
  • Modulators
  • Optical Absorption
  • Optical Modulators
  • Optoelectronic Devices
  • Oscillators
  • Photonic Devices
  • Semiconductors
  • Superlattices
  • Transitions

Fields of Study

  • Materials science

Readers

  • Control Systems Engineering.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Spectroscopy.

Technology Areas

  • Quantum Computing