Ultrafast Measurements of Tunneling Dynamics in a GaAs/AlGaAs MQW Pin Optical Modulator,
Abstract
It has attracted much attention to investigate the mechanisms responsible for the vertical transport of photogenerated carriers in semiconductor multiple quantum wells since all Photoconductive devices depend on it for their properties. The photoconductive rise time which is directly related to the carrier sweep-out time gives important characteristics such as switching time and risetime to SEED (Self Electro-optic Effect Device) - type logic devices and photodetectors. The ultrafast response depends on the detailed nature of the cross well carrier transport mechanisms. Previous measurements have employed the excite-probe technique with electrically biased MQWs to monitor thermionic emission and tunneling via transmission changes caused by the relaxation of the quantum confined Stark effect as carriers leaving the wells.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1992
- Accession Number
- ADP008018
Entities
People
- Alex M. Miller
- C. B. Park
- D. C. Hutchings
- P. Likamwa
Organizations
- University of Central Florida