Ray and TEM Analysis of Small Period W-Si and W-B4C Multilayers,
Abstract
In recent reports of the manufacture and characterization of small period multilayers, researchers have utilized high resolution EM and an analysis of Cu-K alpha X-Ray data to interpret and explain variations of reflectivity from theoretical predictions. These theoretical analyses are based on a dynamical reflectivity calculation which incorporates the Debye-Waller factor to simulate layer/interface roughness. Using the same analysis techniques we have evaluated how layer roughness varies with d-spacing and film thickness for small period (15A<d<22A) multilayers.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 05, 1992
- Accession Number
- ADP008030
Entities
People
- James Scholhamer
- James Wood
- John Mansfield
- Kevin Parker
Organizations
- University of Michigan