Layered Optics for Nuclear Monochromatization of Synchrotron Radiation,
Abstract
The insertion device based third generation synchrotron radiation sources currently under construction in Europe, USA, and Japan brings new opportunities and challenges in the design and manufacturing of x-ray optics. These high brightness sources demand more stringent parameters on the quality of multilayered optics in terms of size, uniformity, and surface and interface roughness. We will present the design principles, and characterization and performance of SnO2 / Pd / quartz Grazing Incidence Anti Reflection, GIAR, films. These films are designed to produce high energy resolution with delta E/E=10(11)10)12) at 23.870 key via 119Sn Mossbauer transition. The energy resolution is tunable between few tens of nano-eV up to mirco-eV level by changing the incident angle. The difficulties associated with pre-monochromatization using multiple bounce Si crystals, and ways to increase angular acceptance, while maintaining high energy resolution will be discussed. The characterization of films in terms of the degree of electronic reflectivity suppression, and nuclear reflectivity will be presented.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 05, 1992
- Accession Number
- ADP008032
Entities
People
- E. Witthoff
- E.e. Alp
- H. Homma
- M. Kentjana
- T. Mooney
Organizations
- Argonne National Laboratory