Application of In-Situ Ellipsometry to the Study of Ultrathin Layers and Soft X-Ray Multilayers,
Abstract
Ellipsometry is an accurate tool to study surface and thin film phenomena. It gives information of the dielectric boundary structures causing diffractions or reflections at the probed area of a surface down to the escape depth of the probe light. With a He-Ne laser light of a wavelength of 633nm, the probed depth for most metals are of an order of a few tens nm, being equivalent to several periods of a soft x-ray multilayer. The accuracy achieved for the single layers is at least a few tenths of ran in thickness. When the fabrication processes are investigated at the high accuracy of ellipsometry, real ultrathin films exhibit characteristic ellipsometric response originating from various imperfections such as non-uniformity (island structure or pinholes), oxidation, chemical compound formation, and diffusion at the interfacial boundary. These are all important phenomena to be studied and controlled for realization of better soft x-ray multilayer optics.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 05, 1992
- Accession Number
- ADP008033
Entities
People
- Masaki Yamamoto
Organizations
- Tohoku University