Interdiffusion Kinetics in Mo/Si Multilayers,
Abstract
Mo/Si multilayers (ML's) are attractive for x-ray optics relatively high associated reflectivity. However, the reflectivity is known to decrease with the formation of diffuse interlayer regions resulting from interdiffusion at the Mo-Si interfaces 1-2. Most of the previous studies have reported interdiffusion coefficients 1-5 and effective activation energies 2-4 over a range of temperature assuming that the interdiffusion coefficient is invariant with annealing time. At temperatures of 560-580 deg C, hexagonal molybdenum-disilicide (h-MoSi2) grows with a square root time dependence at the Mo-Si interface 6. This suggests diffusion-limited growth with a time-invariant interdiffusion coefficient. However, at temperatures of 300-400 deg C, the interlayer structure is known to change with annealing time from amorphous to crystalline 1-3, suggesting the possibility that the rate-controlling mechanism(s) for interdiffusion may also change with annealing time and/or temperature. Therefore, it is the objective of this study to perform a series of annealing treatments of Mo/Si ML's at temperatures lower than those previously reported to determine the Mo-Si interdiffusion kinetics as a function of time.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 05, 1992
- Accession Number
- ADP008058
Entities
People
- D.g. Stearns
- M.a. Viliardos
- M.e. Kassner
- R.s. Rosen
- S.p. Vernon
Organizations
- Lawrence Livermore National Laboratory