Some Optical Properties of Waveguides made by High Energy Ion Implantation in Fused Silica,
Abstract
It is known that implantation of dopants in amorphous silica increases the refractive index, and therefore may lead to the formation of an optical waveguide. The ion implantation usually carried out at energies of a few hundred keV, yielding waveguides with losses of the order of 1 dB/cm. In this work, we used much higher energies (3 and 5 MeV) to implant germanium in pure synthetic fused silica. The objective is to obtain a planar waveguide which would resemble the core of a standard Ge-doped single mode optical fiber, and to study the photosensitive effects which have been observed in these fibers. We have already shown that these waveguides are very photosensitive to ultraviolet light from a KrF excimer laser. The new results reported here concern annealing experiments, controlled bleaching, and photoluminescence of these samples.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1992
- Accession Number
- ADP008072
Entities
People
- Albert B. Malo
- D. C. Johnson
- K. O. Hill
- L. Brebner
- Y. B. Trudeau
Organizations
- Communications Research Centre Canada