Single Layer Structure Supporting both HBT and Modulator,

Abstract

Optical interconnection of electronic integrated circuit chips is currently of great interest. This would provide a much greater bandwidth of information flow on and off the chip, especially if surface-normal devices are used since then information may flow vertically from the chip and the entire area of the chip may be used rather than just the periphery. Modulators are attractive candidates for active optical input/output. We demonstrate here a simple, elegant scheme for producing a modulator and a heterojunction bipolar transistor (HBT) on the same chip. Our layer structure is generally n-p-i-n from the surface downward, with the top layer forming the emitter, and the i region between base and collector. Separate HBT's and modulators are formed by etching mesas with or without emitter pads and without or with optical windows, respectively. This structure has been investigated previously, in Ref. 1, wherein the i region was a GaAs/Al0.3 Ga 0.7 as a multiple quantum well (MQW). This MQW is pathological to the performance of a HBT, since the high barriers block carriers from leaving the base.

Document Details

Document Type
Technical Report
Publication Date
Apr 01, 1992
Accession Number
ADP008093

Entities

People

  • J. E. Cunningham
  • K. W. Goossen
  • W. Y. Jan

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Bipolar Junction Transistors
  • Field Effect Transistors
  • Heterojunction Bipolar Transistors
  • Heterojunctions
  • High Electron Mobility Transistors
  • Integrated Circuits
  • Modulators
  • Optical Interconnects
  • Quantum Wells
  • Transistors

Readers

  • Fluid Dynamics.
  • Integrated Circuit Design and Technology.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Computing