Small Signal and CW Operation of the Lateral Current Injection Heterostructure Field Effect Laser,
Abstract
Recently, we reported on a new Lateral Current Injection Laser suitable for optoelectronic integration, the Heterostructure Field Effect Laser (HFEL). This device utilizes the field effect at the heterointerface within the same structure used to make the Heterostructure Field Effect Transistor (HFET), and the Bipolar Inversion Channel Field Effect Transistor (BICFET). The laser and the HFET can be fabricated from the same single epitaxial growth sequence using the same fabrication sequence. The properties of each device can be optimized simultaneously.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1992
- Accession Number
- ADP008124
Entities
People
- G. W. Taylor
- P. A. Evaldsson
- P. A. Kiely
- P. R. Claisse
- P. W. Cooke