Theoretical Design Optimization for Multiple Quantum Well Electroabsorption Waveguide Modulator,
Abstract
An external waveguide intensity modulator must have low insertion loss and require low drive power. While high contrast ratio, high speed and low drive voltage have been achieved in many recent demonstrations of III-V semiconductor modulators, most modulators still suffer from large insertion loss. A systematic approach has been developed to design a waveguide modulator which considers these four figures of merit: (1) throughput modulation depth, EAT, where E is the coupling efficiency, and AT is the change in transmittance between the ON and the OFF states, (2) contrast ratio (CR), (3) bandwidth (Af), and (4) voltage drive (V). Our approach addresses three important issues: (1) How does a waveguide designed to reduce coupling loss affect the other figures of merit? (2) How does the material design impact on the waveguide design? (3) What is the total performance limit?
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1992
- Accession Number
- ADP008125
Entities
People
- Mee K. Chin
- William S. Chang
Organizations
- University of California, San Diego