Ge-Diffused Passive Optical Waveguide Structures in Silicon,
Abstract
For the fabrication of complex integrated optical devices such as a coherent optical receiver the separate investigation of its components like directional couplers, S-bends and Y-branches is a necessity. A promising material for its realization is silicon since it exhibits an optical absorption of below O.lcm-1 in the infrared regime (A > 1.2/micrometer) provided that waveguides with equally low losses can be produced. The goal is achieved by indiffusing Ge from a stripe containing an alloy of germanium and silicon as proposed in /1,2/ thus minimizing losses due to free carriers. Silicon also offers the potential of being the most developed material for electronic applications making it suitable for an opto-electronic integration. To characterize the waveguides the number of propagating modes and the waveguide losses were determined. Applying a Cut-Back technique the loss was evaluated by measuring the insertion losses of the system polarization maintaining fibre/chip/detector for three different sample lengths. Waveguides with a Ge-indiffusion depth of 1.54 micrometer and a maximum Ge concentration at the surface of 4.5% at 1.3 micrometer have been made.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1992
- Accession Number
- ADP008139
Entities
People
- A. Splett
- B. Schuppert
- J. Schmidtchen
- K. Petermann