3.0-MM Diameter InGaAsP Multiple Quantum Well Ring Laser Actively Mode-Locked at 9.0 GHz,

Abstract

Semiconductor ring lasers are attractive, by the nature of their geometry, for short pulse generation through active mode-locking and colliding pulse mode-locking (CPM). However, to date, only CW operation of small diameter ring lasers in GaAs has been demonstrated. Recent advances in InP fabrication technology have enabled the realization of complex photonic integrated circuits using multiple quantum well (MQW) active regions and low-loss passive waveguides. Using these techniques, we have fabricated an 3.0-mm diameter InGaAsP MQW ring laser which is actively mode-locked at 9.0 GHz producing nearly transform limited 27 ps optical pulses.

Document Details

Document Type
Technical Report
Publication Date
Apr 01, 1992
Accession Number
ADP008181

Entities

People

  • B. I. Miller
  • G. Raybon
  • M.-d Chien
  • P. B. Hansen
  • U. Koren

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Circuits
  • Diameters
  • Geometry
  • Integrated Circuits
  • Lasers
  • Photonic Integrated Circuits
  • Quantum Wells
  • Ring Lasers
  • Semiconductor Devices
  • Semiconductors
  • Waveguides

Fields of Study

  • Materials science

Readers

  • Optical Physics and Photonics.

Technology Areas

  • Directed Energy
  • Microelectronics
  • Quantum Computing