Wide Tunability and Large Mode-Suppression in a Multi-Section Semiconductor Laser Using Sampled Gratings
Abstract
We have recently proposed a 4-section semiconductor laser which is capable of tuning over several tens of nanometers. A schematic of this device is shown, along with the reflection spectra of the two mirrors which form the backbone of this device. These two mirrors consist of sampled gratings with mismatched periodic reflection spectra, as indicated. Lasing in this structure occurs where two reflection maxima are aligned. By inducing index changes in one mirror relative to the other, adjacent reflectivity maxima can be brought into alignment, resulting in wide-range discontinuous tuning with very small index changes. Wavelength coverage between the maxima can be obtained by inducing identical index changes in the two mirrors, and a adjusting the phase-shifter appropriately, much like 3-section lasers.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1992
- Accession Number
- ADP008197
Entities
People
- A. Mathur
- L.A. Coldren
- P. D. Dapkus
- S. Denbaars
- Vasanthi Jayaraman
Organizations
- University of California, Santa Barbara