A Compact 2X2 Amplifier Switch with Integrated DBR Lasers Operating at 1.55 Microns,
Abstract
The need for optical switching of data is becoming more apparent as fiber optical transmission is being used for telecommunication systems. Many groups have reported optical switching in semiconductor based devices, using either electro-optic effects or optical amplifier gates. Recently it has been shown, that by using an amplifier-based switching array, coupling losses can be recovered in addition to exhibiting high extinction ratios. In this paper, we present the integration of a compact amplifier-based optical switch with distributed Bragg reflector lasers. This allows light from an integrated laser source to be spatially switched to one of two output ports. The device was fabricated from a standard MOVPE-grown wafer used for long wavelength lasers. An InGaAs/InGaAsP multiple quantum well stack with a wavelength of 1.55 micrometers was grown on top of 1.3 micrometers quaternary grating and waveguide layers. InP stop etch layers were placed at certain levels to allow selective wet chemical etching. After selectively removing the quantum wells in the passive sections, 3 micrometers wide buried-rib passive waveguides and DBR gratings were defined using standard photolithographic and holographic techniques. 'Ibis was followed by two MOVPE regrowths. In the first regrowth, semi-insulating InP covered the passive waveguides and gratings and was used for current blocking in the active sections.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1992
- Accession Number
- ADP008200
Entities
People
- B. I. Miller
- M. A. Newkirk
- M. Chien
- M. G. Young
- U. Koren