GaInAs/GaAs Waveguide Modulators with Multiple Short-Period Strained-Layer Superlattice Quantum Wells,
Abstract
InGaAs/GaAs multiple quantum well (MQW) structures with wells that consist of InAs/GaAs short-period strained-layer superlattices (SPSLS) have shown sharp excitonic absorption peaks at room temperature, despite the high degree of strain. By using superlattices with multiple periods consisting of 2 monolayers of InAs and 5 monolayers of GaAs, dislocation free InGaAs wells with 0.30 average In mole fractions have been obtained. We report the first MQW waveguide modulators based on these InAs/GaAs SPSLS quantum wells. These modulators demonstrate significant electro-absorption and electro-refraction effects at wavelengths between 1.00 and 1.06 micrometers. An advantage of such modulators is that they can be monolithically integrated with low-threshold-current InGaAs lasers as well as low-loss GaAs wave-guides for various optical circuit applications. In addition, stronger electric-field dependences are expected for the wider wells permitted by the use of SPSLS.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1992
- Accession Number
- ADP008207
Entities
People
- A. R. Kost
- D. Yap
- S. L. Bourgholtzer
- T. C. Hasenberg
- T. Y. Hsu
Organizations
- HRL Laboratories