Quantum-Confined Stark Effect of InGaAsP Quantum Wells Grown on (110) InP Substrates,
Abstract
Quantum well structures show interesting optical properties associated with their remarkable exciton absorption resonances. In the quantum-confined Stark effect (QCSE), electric fields applied perpendicular to quantum well (QW) layers can shift the optical absorption edge to lower photon energies with the exciton absorption peaks remaining clearly resolved. This effect has been studied extensively as it is useful in optical modulation and photonic switching applications. At this time, most QCSE studies concentrate on the (100) orientation or, in a few cases, on (111) strained QWs to obtain a blue shift originating from piezoelectric built-in potentials. The (110)-oriented QWs are expected to exhibit peculiar characteristics as the lower symmetry of the quantum-confined direction results in in-plane polarization anisotropy of the optical transitions. Anisotropic properties are reported in GaAs/AlGaAs (110)-oriented QWs. It is believed that strained QWs on (110) substrates will also generate in-plane piezoelectric fields which will provide bi-refringence for light propagating along the MQW growth axis.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1992
- Accession Number
- ADP008218
Entities
People
- K. Oe
- K. Wakita
- M. A. Koza
- R. Bhat