Transport Properties of Bi-related Nanowire Systems
Abstract
We present here an electrical transport property study of Te-doped Bi nanowires, and Bi(1-x)Sb(x) alloy nanowires embedded in a dielectric matrix. The crystal structure of the nanowires were characterized by X-ray diffraction measurements, indicating that the nanowires possess the same lattice structure as bulk Bi in the presence of a small amount of Te or Sb atoms. The resistance measurements of 40-nm Te-doped Bi nanowires were performed over a wide range of temperature (2 K less than or equal T less than or equal 300 K), and the results are consistent with theoretical predictions. The 1D-to-3D localization transition and the boundary scattering effect are both observed in magneto-resistance measurements of Bi(1-x)Sb(x) alloy nanowires at low temperatures (T < 4K).
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 2001
- Accession Number
- ADP011025
Entities
People
- J. Heremans
- J.y. Ying
- M. S. Dresselhaus
- S. B. Cronin
- Y. M. Lin
Organizations
- Massachusetts Institute of Technology