Self-Assembling Nanostructures and Atomic Layer Precise Etching in Molecular Beam Epitaxy

Abstract

We report on the preparation of 10 nm lateral size semiconductor structures based on island formation in strained layer growth in molecular beam epitaxy. Red light emitting InP quantum dot injection lasers are presented. They contain densely stacked layers of self-assembled InP quantum dots embedded in a Ga(0.51) In(0.49) wave guide layer. In the second part of this contribution we report on a new atomic layer precise etching technique in MBE, which allows improved interface control for the preparation of semiconductor nanostructures. The etching process involves AsBr3 exposure of a GaAs or AlGaAs surface. Switching between atomic layer precise growth and etching is possible within a few seconds.

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Document Details

Document Type
Technical Report
Publication Date
Feb 15, 1999
Accession Number
ADP011199

Entities

People

  • H. Schuler
  • K. Eberl
  • M. K. Zundel

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Current Density
  • Epitaxial Growth
  • Laser Diodes
  • Materials
  • Modules (Electronics)
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Optoelectronic Devices
  • Power Electronics
  • Quantum Dot Lasers
  • Quantum Dots
  • Quantum Electronics
  • Quantum Well Lasers
  • Quantum Wells
  • Semiconductors
  • Spectra

Fields of Study

  • Materials science

Readers

  • Nanofabrication and Microfabrication.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Directed Energy
  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Computing