Two-Photon Optical-Beam-Induced Current Microscopy of Indium Gallium Nitride Light Emitting Diodes

Abstract

In this study, epilayers of packaged indium gallium nitride light emitting diodes (LED's) are characterized by optical beam induced current (OBIC) and photoluminescence laser scanning microscopy through two-photon excitation. OBIC reveals spatial and electrical characteristics of LED's which can not be distinguished by photoluminescence. When compared with single-photon OBIC, two-photon OBIC imaging not only exhibits superior image quality but also reveals more clearly the characteristics of the epilayers that are being focused on. The uniformity of these LED's OBIC images can also be related to their light emitting efficiency.

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Document Details

Document Type
Technical Report
Publication Date
Jul 01, 2000
Accession Number
ADP011223

Entities

People

  • Fu-jen Kao
  • Mao-kuo Huang
  • Ming-kwei Lee
  • Sheng-lung Huang
  • Yung-shun Wang

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Band Gaps
  • Compound Semiconductors
  • Confocal Microscopy
  • Efficiency
  • Electrical Engineering
  • Gallium Nitrides
  • Laser Beams
  • Lasers
  • Light Emitting Diodes
  • Luminescence
  • Microscopy
  • Optics
  • Optoelectronic Devices
  • Photoluminescence
  • Quantum Efficiency
  • Semiconductor Devices
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Molecular Photonics/Laser Physics
  • Semiconductor Device Technology
  • Trauma Surgery or Emergency Medicine.

Technology Areas

  • Directed Energy
  • Microelectronics