Luminescence of the InGaN/GaN Blue Light-Emitting Diodes

Abstract

InGaN/GaN double heterostructure (DH) and multiple quantum wells(MQW) light-emitting diodes were grown by metalorganic vapor phase epitaxy(MOVPE). Band gap narrowing of the PL spectra for the InGaN/GaN MQW LEDs can be observed at room temperature. In addition, the emission wavelength of EL and PL spectra for the MQW blue LEDs exhibit a blue-shift phenomenon when increasing the injection current and laser power, respectively. This luminescence behavior can tentatively be understood as a competition between a spectral red-shift mechanism of piezoelectricity-induced quantum-confined Stark effect(PQCSE) and a blue-shift mechanism of band-filling and charge screening effects.

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Document Details

Document Type
Technical Report
Publication Date
Jul 01, 2000
Accession Number
ADP011314

Entities

People

  • G. C.. Chi
  • J. K. Sheu
  • T. W. Yeh

Organizations

  • National Central University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Gaps
  • Conduction Bands
  • Crystal Defects
  • Electroluminescence
  • Emission Spectra
  • Energy Bands
  • Energy Gaps
  • Heterojunctions
  • Laser Diodes
  • Light Emitting Diodes
  • Low Temperature
  • Luminescence
  • Quantum Wells
  • Semiconductors
  • Spectra
  • Valence Bands
  • Wide Bandgap Semiconductors

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Quantum Computing