Electronic Structure, Amorphous Morphology and Thermal Stability of Transition Metal Oxide and Chalcogenide Alloys

Abstract

This paper is presented to honor Professor Radu Grigorovici at his 90th birthday celebration for his outstanding contributions to the chemical bonding and atomic structure of amorphous semiconductors, including the chalcogenides that are highlighted at this conference. A chemical bonding approach is applied in this paper to noncrystalline transition metal oxides and their silicate and aluminate alloys. Transition metal oxides and alloys are considerably more ionic than SiO2, and this increased ionicity, along with the localized electronic structure associated with transition metal atom d-states is the basis for the significant differences in their optical and electrical properties. This paper also provides new insights into the electronic structure of transition metal chalgogenide alloys.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 2001
Accession Number
ADP011500

Entities

People

  • G. Lucovsky

Organizations

  • North Carolina State University

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Advanced Materials
  • Band Gaps
  • Band Structures
  • Conduction Bands
  • Dielectrics
  • Energy Bands
  • Energy Levels
  • Field Effect Transistors
  • Films
  • Group 16 Elements
  • Materials
  • Materials Science
  • Metal Oxide Semiconductors
  • Optical Properties
  • Semiconductor Devices
  • Semiconductors
  • Valence Bands

Fields of Study

  • Materials science

Readers

  • Academic Conference Management
  • Quantum Chemistry
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene