Atomic and Electronic Structures of Glassy Ge sub x Se sub 1-x Around the Stiffness Threshold Composition

Abstract

Anomalous x-ray scattering experiments on glassy Ge(x)Se(1-x) have been carried out at energies close to the Ge and Se K edges at concentrations close to the onset and completion of the rigidity percolation threshold (x 0.195 and 0.23). The total structure factors S(Q) show rapid changes in both the position and intensity of the prepeak around 10 nm(-1), while remaining almost unchanged in the other Q ranges. The differential structure factors delta S(Q)(Q) obtained have characteristic features of their own. A detailed comparison among them suggests that the prepeak originates from only the Ge-Ge correlation. On the basis of the concentration dependence of the spectra and the existing partial structure factors of glassy GeSe(2) obtained by Petri et al, the origin of the prepeak is discussed. Valence and conduction-band electronic density of states of glassy Ge(x)Se(1-x) (0 </= x </= 0.33) were also investigated by measuring the ultraviolet photoemission and inverse photoemission spectra.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 2001
Accession Number
ADP011504

Entities

People

  • S. Hosokawa

Organizations

  • University of Marburg

Tags

DTIC Thesaurus Topics

  • Advanced Materials
  • Amorphous Materials
  • Analyzers
  • Detectors
  • Diffraction
  • Electrons
  • Energy Bands
  • Measurement
  • Quantum Numbers
  • Raman Scattering
  • Scattering
  • Spectra
  • Spectroscopy
  • Vacuum
  • Valence Bands
  • X Ray Scattering
  • X Rays

Fields of Study

  • Physics

Readers

  • Materials Science and Engineering.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene