Physical Properties of Doped Chalcogenide Glassy Semiconductors Which are Governed by the Interaction of Negative-U Defects and Impurity States

Abstract

According to the paper the appearance of clusters with z>z(0) very important for effective doping process. It is known that CGS have soft, labile atomic structure with a great number lone-pair (LP) electrons of chalcogenide atoms, which do not take part in a net of CGS covalent bonds. These facts together with a disorder provide a fulfillment of famous 8-N rule and inefficiency of CGS doping. More rigid atomic structure of clusters prevents a fulfillment of 8-N rule and allows to exist donor- and acceptor-like electronic impurity states inside the clusters. Then "official" doping elements (Bi and Ni in our cases) together with CGS atoms (As and Se) play role of the main constituent atoms of clusters. Therefore the real chemical nature of donor or acceptor like electronic impurity states must be determined in each individual case and may not coincides with the "official" doping elements.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 2001
Accession Number
ADP011505

Entities

People

  • K. D. Tsendin

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Advanced Materials
  • Conductivity
  • Crystal Structure
  • Cubic Lattices
  • Direct Current
  • Electrical Properties
  • Electrons
  • Energy Bands
  • Fermi Levels
  • High Temperature
  • Metal Oxides
  • Mobility
  • Optical Materials
  • Physical Properties
  • Semiconductors
  • Superconductivity
  • Transition Temperature

Readers

  • Materials Science and Engineering.
  • Military History of the United States in the 20th Century.
  • Quantum Chemistry

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene