Peculiarities of Gamma-Induced Optical Effects in Ternary Systems of Amorphous Chalcogenide Semiconductors

Abstract

Changes of optical transmittance induced by the influence of 60Co gamma-irradiation have been studied in ternary As-Ge-S, Sb-Ge-S, As-Ge-Se and As-Bi-Se systems. The characters of radiation-induced optical effects in all these systems have been compared It was shown that the compositional dependencies of such effects are almost linear for stoichiometric glasses and reveal some peculiarities connected with phase features, the "free volume" parameters and the specificity of radiation induced defects formation for non-stoichiometric families.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 2001
Accession Number
ADP011519

Entities

People

  • A. Kovalskiy

Organizations

  • National University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Advanced Materials
  • Atoms
  • Chemical Bonds
  • Chemical Composition
  • Chemical Elements
  • Engineered Materials
  • Materials
  • Materials Science
  • Optical Materials
  • Optical Phenomena
  • Phase Separation
  • Phase Transformations
  • Radiation
  • Semiconductors
  • Solid State Physics
  • Technical Information Centers
  • Transmittance

Fields of Study

  • Physics

Readers

  • Immunology
  • Nuclear and Radiation Engineering.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics