Radiation Defects in Amorphous As-Ge-S Studied by Positron Annihilation Techniques
Abstract
The nature of coordination defects in chalcogenide vitreous semiconductors of As-Ge-S system have been analyzed before and after gamma-irradiation using the results of positron lifetime measurements. The correlations between the positron lifetime data, the structural features and the chemical compositions of glasses have been established. The identification of negatively charged point defects has been carried out.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 2001
- Accession Number
- ADP011520
Entities
People
- A. P. Kovalskiy
- J. Filipecki
- M. Hyla
- O. I. Shpotyuk
- R. Y. Golovchak
Organizations
- National University