Features of Physicochemical Interaction in Thin-Film System on the Base of Arsenic Trisulphide and Copper
Abstract
Physicochemical interactions in amorphous As2S3 copper thin film systems were studied by the methods of resistometry, ellipsometry, microscopy and by the chemical dissolution. It was shown that considerable variation of chemical process activity observed in these systems is caused by an essential dependence of the physicochemical interaction rate on chalcogenide film stoichiometry and imperfection of its structure. Ellipsometric modeling results indicate that the thickness distribution of the dissolved copper is close to a rectangular shape. It confirms reactionary nature of interaction. Application of our thermochemical model for a probability estimation of quasi-molecular reactions of copper and oxygen with polymerized and non-polymerized fragments in arsenic trisulfide film enabled to give qualitative description of the interaction mechanism. Comparison with As2S3-Ag system is made. Results presented in this work indicate some new ways to control physicochemical interaction process in amorphous chalcogenide-metal thin-film systems.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 2001
- Accession Number
- ADP011535
Entities
People
- M. T. Kostyshin
- M. V. Sopinskyy
Organizations
- National Academy of Sciences of Ukraine