Donor- and Acceptor-Like Center Revealing by Photoconductivity of Amorphous Thin As2Se3 Films

Abstract

Measurements of photoconductivity and relaxation of positive and negative charge in amorphous thin As2 Se3 layers are discussed. Photosensitive donor and acceptor like centers of 1.05 eV and 0.76 eV energies from valence band were revealed. These energies are constant and independent of light intensity in the range l.5x10(9) - l.5xlO(15) quanta/(cm(2)s) and of energy of quanta. Wide quasicontinuously distribution trap centers with maximums at 0.62, 0.87 and 1.05 eV were found by relaxation measurements of positive and negative charge.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 2001
Accession Number
ADP011541

Entities

People

  • A. M. Andriesh
  • V. I. Verlan

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Advanced Materials
  • Band Gaps
  • Charge Carriers
  • Conductivity
  • Electrical Properties
  • Energy
  • Energy Bands
  • Excitation
  • Experimental Data
  • Fermi Levels
  • Films
  • Heat Of Activation
  • Materials
  • Measurement
  • Photoconductivity
  • Semiconductors
  • Valence Bands

Readers

  • Molecular Photonics/Laser Physics
  • Optical Physics and Photonics.
  • Thin Film Deposition Science.