Optical and Electrical Properties of Amorphous (GeS2) sub 100-x Ga sub x Thin Films

Abstract

Results from the study of basic optical and electrical parameters of semiconducting (GeS2) 100-x Ga(x) (x=0, 4, 8, 12 at%) amorphous layers have been summarized. The investigation of the optical absorption has shown that the introduction of Ga leads to a shift in the absorption edge towards lower energies in comparison with Ge S2. The spectral distribution of the refractive index n, accounting the influence of photoexposure, has been specified.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 2001
Accession Number
ADP011546

Entities

People

  • P. Petko
  • V. S. Vassilev
  • Z. G. Ivanova

Organizations

  • Bulgarian Academy of Sciences

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Advanced Materials
  • Auger Electron Spectroscopy
  • Auger Electrons
  • Band Gaps
  • Electrical Properties
  • Electron Spectroscopy
  • Electrons
  • Energy Bands
  • Energy Gaps
  • Films
  • Glass Transition Temperature
  • Materials
  • Optical Materials
  • Optical Properties
  • Refractive Index
  • Solid State Physics
  • Thin Films

Fields of Study

  • Physics

Readers

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