Analysis of a-SiO2/ a-Si Multilayer Structures by Ion Beam Methods and Electron Spin Resonance
Abstract
Multilayered structures of a-Si/SiO2 sequences were deposited using a magnetron sputtering system, where Si atoms are sputtered in an Ar-O2 mixture. All samples have the same total thickness (250 nm) and the thickness/layer is between 2 nm and 16 nm. The purpose of this paper is to investigate the inhomogeneity of these films and its limit. The sample composition and thickness were investigated by conventional Rutherford backscattering spectrometry (RBS), high resolution RBS using a magnetic spectrograph and elastic recoil detection (ERD). The analysis of the conventional RBS and ERD spectra has revealed that samples with 16 nm/layer consists of a-Si/SiO2 sequences. The high-resolution RBS measurements have also shown a multilayered structure for samples with a smaller layer thickness.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 2001
- Accession Number
- ADP011561
Entities
People
- A. M. Vredenberg
- E. E. Van Faassen
- J. J. Van Hapert
- N. Tomozeiu
- W. M. Arnoldbik
Organizations
- University of Bucharest