Optical and Electrical Properties of As-Deposited LPCVD SiO sub x N sub y Thin Films

Abstract

The silicon oxynitride (SiO(x)N(y)) films have several applications in opto- and micro-electronics technology: thin gate dielectrics, optical wave guides and membranes for microelectromechanical systems (MEMS). In some applications it is necessary a controllable variable refractive index of the silicon oxynitride films. In others, the defect density at the Si/a-SiO(x)N(y) interface should be well controlled. This paper deals with these issues and an investigation of the relationship between deposition parameters and the physical properties of the a-SiO(x)N(y) films is done. Amorphous silicon oxynitride films of various compositions were deposited by low pressure chemical vapor deposition (LPCVD) at temperature around 800 degrees centigrade and 400 mTorr, using mixture of SiCl(2)H(2)-NH(3)-N(2)O. The investigations on optical and electrical properties of the samples were made using spectroellipsometry and capacitance voltage measurements.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 2001
Accession Number
ADP011563

Entities

People

  • A. Szekeres
  • M. Modreanu
  • Mariuca Gartner
  • N. Tomozeiu

Organizations

  • University of Bucharest

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Advanced Materials
  • Amorphous Materials
  • Band Gaps
  • Capacitance
  • Ceramic Materials
  • Chemical Vapor Deposition
  • Dielectric Permittivity
  • Dielectrics
  • Electrical Properties
  • Energy Bands
  • Films
  • Materials
  • Materials Science
  • Microelectromechanical Systems
  • Optical Properties
  • Refractive Index
  • Thin Films

Readers

  • Integrated Circuit Design and Technology.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Microelectronics - Microelectromechanical Systems