Feasibility of a Si(1-x)Ge(x) THz Resonant-State Laser

Abstract

We report on pulsed THz emission from Si(1-x)Ge(x) structures d-doped with Boron Si(1-x)Ge(x) layer was sandwiched between two Si layers grown by MBE on n-type Si substrate. Optical resonator was formed by high-accuracy polishing of lateral facets. Non-thermal emission was observed at electric field > 250 V/cm and pulse duration was < 1 micro s. We believe the emission is due to the population inversion of carriers in the Si(1-x)Ge(x) quantum well.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Sep 29, 2000
Accession Number
ADP011733

Entities

People

  • H. K. Olsson
  • I. V. Altukhov
  • M. S. Kagan
  • V. P. Sinis
  • Yu. P. Gousev

Organizations

  • Royal Institute of Technology

Tags

Communities of Interest

  • Advanced Electronics
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Accuracy
  • Detectors
  • Electric Fields
  • Electronics
  • Emission
  • Energy Bands
  • Energy Gaps
  • Energy Levels
  • Filters
  • Frequency
  • Ground State
  • Ionization
  • Lasers
  • Low Noise Amplifiers
  • Optomechanics
  • Quantum Wells
  • Valence Bands

Fields of Study

  • Materials science

Readers

  • Optical Physics and Photonics.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Directed Energy - Lasers
  • Quantum Computing