THz Sources Based on Semiconductor Quantum Structures

Abstract

We present a study on spontaneous THz emission from semiconductor quantum structures. THz emission from parabolically graded AlGaAs/GaAs quantum wells driven by an in-plane electric field has been measured. We have analyzed the grating coupled radiation in the temperature range from 20 K to 240 K. The peak emission corresponds to the intersubband plasmon in the parabolic potential. From a quantum cascade structure we observe spontaneous THz emission, based on carrier injection into the excited state of a 26 nm quantum well. We have measured luminescence at a photon energy of 17.3 meV with a full linewidth at half maximum of 1.3 meV.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Sep 29, 2000
Accession Number
ADP011735

Entities

People

  • E. Gornik
  • G. Strasser
  • J. Ulrich
  • Karl Unterrainer
  • R. Zobl

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Background Radiation
  • Band Structures
  • Cascade Structures
  • Detectors
  • Electric Fields
  • Electrons
  • Emission Spectra
  • Energy Bands
  • Frequency
  • High Temperature
  • Magnetic Fields
  • Quantum Wells
  • Radiation
  • Scattering
  • Semiconductors
  • Spectra
  • Terahertz Radiation

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Quantum Computing