Frequency Difference Generation in the Terahertz Region Using LTG-GaAs Photodetector
Abstract
We demonstrated Terahertz generation by optical frequency difference with a continuous tuning between 0.2 (^ 1 micro W ) and 3 THz (^1 nW). To this aim, high speed photodetectors with an interdigited photoconductor scheme on a submicron scale, loaded by THz log-periodic antennas, were deposited on a 1 micrometer-thick Low Temperature Grown (200 deg C) GaAs epilayer. Two Ti:Sapphire laser beams (^ 30 mW) focused onto the device yield Terahertz radiation collimated through Silicon lens and detected by means of lock-in bolometer detection. The generated power and frequency, consistent with semiconductor and circuit time constants, are discussed in the prospects of antenna arrays and optical cavities.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 29, 2000
- Accession Number
- ADP011737
Entities
People
- E. Peytavit
- G. Mouret
- J. F. Lampin
- P. Masselin
- P. Mounaix