Study of Terahertz Radiation from Narrow Bandgap Semiconductors: InAs and InSb

Abstract

We investigated THz radiation from narrow bandgap semiconductors: n-type, p-type InSb and InAs were investigated using a time-resolved THz detection system. As a reference, THz radiation from InP (a wide bandgap semiconductor) was also measured. From the polarity of the waveforms we concluded that the ultrafast build-up of a photo-Dember field is the main emission mechanism for both InAs and InSb.

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Document Details

Document Type
Technical Report
Publication Date
Sep 29, 2000
Accession Number
ADP011741

Entities

People

  • Kiyomi Sakai
  • Masahiko Tani
  • Ping Gu
  • Shunsuke Kono

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Gaps
  • Charge Carriers
  • Detectors
  • Diffusion Coefficient
  • Electron Mobility
  • Electronics Laboratories
  • Electrons
  • Laser Beams
  • Laser Pulses
  • Mobility
  • N Type Semiconductors
  • Narrow Band Gap Semiconductors
  • Polarity
  • Radiation
  • Refractive Index
  • Semiconductors
  • Terahertz Radiation

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Radar Systems Engineering.

Technology Areas

  • Microelectronics