Electrical Detection of THz Frequencies by Asymmetrically Shaped n-n(+)-GaAs Diodes
Abstract
We propose a planar diode based on a thin asymmetrically-shaped n-n(+)-GaAs junction prepared on an elastic polyimide film as THz detector. The device can be used to detect electromagnetic radiation in the range from 0.129 THz up to 2.5 THz at room temperature. The principle of operation of the device is based on non-uniform carrier heating effects caused by both the asymmetrical shape of the structure and the presence of the n-n(+) junction. An estimate of the sensitivity of the device based on a phenomenological approach for the description of the physical processes gives good agreement with the experimental data within the studied range of frequencies.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 29, 2000
- Accession Number
- ADP011784
Entities
People
- Algirdas Suziedelis
- Gintaras Valusis
- Harmut G. Roskos
- Jonas Gradauskas
- Steponas Asmontas
Organizations
- Semiconductor Physics Institute