III-V Material Systems for Heterostructure Barrier Varactors

Abstract

This paper presents the lattice matched and pseudomorphic Al(0.7)Ga(0.3)As/GaAs and In(0.52)Al(0.48)As/ In(0.53)Ga(0.47)As/InP material systems for HBVs. HBVs with different mesa diameters have been fabricated and their DC characteristics have been measured. A comparison of the DC characteristics are presented for the two material systems.

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Document Details

Document Type
Technical Report
Publication Date
Sep 29, 2000
Accession Number
ADP011788

Entities

People

  • A. Megej
  • J. Sigmund
  • K. Mutamba
  • M. Rodriguez-girones
  • M. Saglam

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Band Gaps
  • Chemical Etching
  • Conduction Bands
  • Electronics
  • Energy Bands
  • Epitaxial Growth
  • Fabrication
  • Heterojunctions
  • Materials
  • Metal-Semiconductor Junctions
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Semiconductors
  • Technical Information Centers
  • Terahertz Radiation
  • Varactor Diodes

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology