An InGaAs/InAlAs Superlattice Oscillator for Frequencies Above 100 GHz
Abstract
We present an InGaAs/InAlAs superlattice oscillator at 150 GHz with a superlattice device mounted in a waveguide and biased at a voltage of 1.3 V (current 15 mA), radiation of a power of 0.1 mW was generated. In the doped superlattice, the electron motion is governed by miniband transport, leading to a negative differential conductance due to Bragg reflection of the electrons at the miniband boundary. As a consequence, propagating charge carrier domains are formed giving rise to microwave generation with the frequency determined by the domain velocity. By using superlattices with thinner layers it should be possible to reach higher domain velocities, and hence higher oscillation frequencies.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 29, 2000
- Accession Number
- ADP011789
Entities
People
- A. Ignatov
- D. G. Pavelev
- E. Schomburg
- K. F. Renk
- R. Scheuerer