Integrated 150 GHz Silicon IMPATT Diodes for Power Combining Applications

Abstract

This paper describes the manufacturing process of integrated Si-IMPATT diodes for power combining applications at 150 GHz. A computer optimized doping profile is grown by molecular beam epitaxy (MBE) on high resistivity Si-substrate. The new technology process that realizes the integration of a diode and its housing is explained in detail. The device is thermo-compression bonded in a single step onto a diamond heat sink. Measurements are made in a rectangular, reduced height waveguide resonator. The integrated IMPATT device is designed for high reproducibility. Variations that were formerly introduced by multiple bonding steps in the fabrication of quartz ring housings are eliminated. The single bonding step used here results in the improved diode matching required for power combining applications.

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Document Details

Document Type
Technical Report
Publication Date
Sep 29, 2000
Accession Number
ADP011790

Entities

People

  • J. F. Luy
  • K. Schuenemann
  • M. Luschas
  • R. Judaschke

Tags

Communities of Interest

  • Advanced Electronics
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Avalanche Diodes
  • Computers
  • D Band
  • Diameters
  • Diodes
  • Electronics
  • Etching
  • Fabrication
  • Heat Energy
  • Heat Sinks
  • Impatt Diodes
  • Manufacturing
  • Measurement
  • Radio Frequency Power
  • Resistance
  • Simulations
  • Thermal Resistance

Fields of Study

  • Materials science

Readers

  • Optical Physics and Photonics.
  • Semiconductor Device Technology
  • Thermal Physics or Thermal Science.