Temperature Dependence of Low Energy Carrier Dynamics of Silicon by Terahertz Time Domain Spectroscopy

Abstract

The complex conductivity of moderately P-doped silicon wafers (1.1 plus or minus 0.2 ohm cm) at various temperatures has been deduced by using a terahertz time-domain (THz-TDS) spectroscopy. The characteristic dispersion of the complex conductivity is observed in the THz region. Temperature dependence of the complex conductivity changes dramatically around ^120 K, which is interpreted in terms of enhancement of mobility and the freezing of the carrier. The experimental data at low temperatures slightly deviates from the simple Drude model, which causes the underestimation of the mobility and overestimation of the carrier density.

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Document Details

Document Type
Technical Report
Publication Date
Sep 29, 2000
Accession Number
ADP011797

Entities

People

  • Kazue Takata
  • Masanori Hangyo
  • Osamu Morikawa
  • Shigeki Nashima

Organizations

  • Osaka University

Tags

DTIC Thesaurus Topics

  • Conductivity
  • Dielectric Permittivity
  • Dispersions
  • Dynamics
  • Electrons
  • Equations
  • Frequency
  • Low Temperature
  • Measurement
  • Millimeter Waves
  • Mobility
  • Optical Properties
  • Semiconductor Devices
  • Semiconductors
  • Terahertz Radiation
  • Time Domain
  • Transport Properties

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Spectroscopy.
  • Thermal Physics or Thermal Science.