Photoluminescence from Pressure - Annealed Nanostructured Silicon Dioxide and Nitride Films

Abstract

Light emission in thin films (SiO2, SiO2:Si and Si3N4) on a single crystalline silicon surface has been investigated after treatment at enhanced argon pressure, HP. Pronounced effect of HP up to 1.5 GPa during annealing up to 1550 K on photoluminescence, PL, of the SiO2, SiO2:Si and Si3N4 films of 0.1 - 1.2 micrometers thickness has been stated. The pressure - temperature treatment results in development and enhancement of ultraviolet and visible PL at about 290 - 320, 360, 460, 600 and 680 um, related to stress induced creation of PL active silicon nanoclusters and other oxygen deficient defects.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2000
Accession Number
ADP011812

Entities

People

  • A. Iller
  • A. Misiuk
  • I. E. Tyschenko
  • J. Jun
  • L. Rebohle

Organizations

  • Institute of Electron Technology

Tags

DTIC Thesaurus Topics

  • Annealing
  • Barometric Pressure
  • Ceramic Materials
  • Films
  • High Pressure
  • Materials
  • Materials Science
  • Measurement
  • Nanocrystals
  • Nanoparticles
  • Oxidation
  • Radiation
  • Semiconductors
  • Silicon Dioxide
  • Spectra
  • Thin Films
  • Ultraviolet Lamps

Readers

  • Exercise and Sports Science.
  • Materials Science and Engineering.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene