Optical and Thermal Properties of SiNx for MO Disks

Abstract

SiN(x), films were prepared by rf reactively sputtering. The refractive index of SiN(x) films was affected by total pressure and sputtering power. When the total pressure increased, the refractive index decreased. The reduction of sputtering power showed similar effect to raise the total gas pressure. The residual stress and roughness of SiN(x) films depended on the total pressure sputtering power, and the thickness. The thermal cycles may result in irreversible change of residual stress Of SiN(x) film. The magnetic properties of TbFeCo depended on the residual stress and roughness of SiN(x) in the trilayer SiN(x)/TbFeCo/SiN(x) samples. The coercivity of TbFeCo was enhanced in the samples with SiN(x) films having low stress and large roughness.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2000
Accession Number
ADP011836

Entities

People

  • Cheng L. Huang
  • Chih H. Lai
  • Chun Y. Hsu
  • I. N. Lin
  • Jwo H. Jou

Organizations

  • National Tsing Hua University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Coercivity
  • Dielectric Films
  • Information Processing
  • Kinetic Energy
  • Magnetic Properties
  • Materials
  • Materials Science
  • Optical Properties
  • Radio Frequency Power
  • Refractive Index
  • Residual Stress
  • Residuals
  • Roughness
  • Sputtering
  • Stresses
  • Thermal Stresses
  • Thickness

Readers

  • Mechanical Engineering/Mechanics of Materials.
  • Nanofabrication and Microfabrication.