Annealing of GaSb Single Crystals in Ionised Hydrogen Atmosphere

Abstract

GaSb undoped wafer were annealed in flowing ionised hydrogen atmosphere at temperature range between 100 - 350 deg C for 1 - 50 hours. The free carrier concentration and resistivity were measured. It was found out that the wafers being treated at a temperature of 150 deg C for 24 hours reached the resistivity of about 10(exp 2) - 10(exp 3) ohms.cm and the free carrier concentration was lower than 1 x 10(exp 15)/cu cm. However, the thickness of the passivated layer was only 0.4 - 0.6 micrometer.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2001
Accession Number
ADP011871

Entities

People

  • Bedrich Stepanek
  • Jaroslav Sestak
  • Vera Sestakova

Organizations

  • Czech Academy of Sciences

Tags

Communities of Interest

  • Advanced Electronics
  • Sensors
  • Weapons Technologies

DTIC Thesaurus Topics

  • Annealing
  • Atmospheres
  • Crystals
  • Czech Republic
  • Diffusion
  • Electrical Measurement
  • Elements
  • Focal Plane Arrays
  • Focal Planes
  • Gallium Antimonides
  • Hydrogen
  • Materials
  • Measurement
  • Melting Point
  • Single Crystals
  • Technical Information Centers
  • Thickness

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Mathematics or Statistics
  • Thin Film Deposition Science.