Growth and Structure of Strontium Doped LaGaO3
Abstract
A series of La(1-x)Sr(x)GaO3 solid solution single crystals with x = 0, 0.04 and 0.12 were grown by the Czochralski method and with x = 0.01, 0.06 and 0.1 by the floating zone method. The segregation coefficient of Sr in LaGaO3 has been found to be k(sub eff) (Sr) = 1.25 (+/- 0.01). The crystals were grown from the melt with stoichiometric Ga2O3 amount at a growth rate ranging from 2.5 mm/h for pure LaGaO3 to 1.2 mm/h for La(0.88)Sr(0.12)GaO3. The structure of these crystals was investigated by X-ray powder diffraction technique using CuK(sub alpha) radiation. The diffraction patterns were analyzed by Rietveld refinement method. Crystals with strontium concentrations from x = 0 to 0.1 crystallizes adopting Pbnm structure. It was found that deviation from the ideal perovskite structure decreases with rising strontium concentration, finally reaching centrosymmetric Ibmm structure at x = 0.12. Orthorombic unit cell parameters c and b decreases whereas a increases with x. Thermal analysis proved that the temperature of the first order phase transition observed in pure LaGaO3 at 150 deg C falls to 126 deg C at x 0.01 and remains almost constant at higher x.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 2001
- Accession Number
- ADP011872
Entities
People
- J. Fink-finowicki
- M. Berkowski
- P. Byszewski
- R. Aleksiyko
- R. Diduszko
Organizations
- Polish Academy of Sciences