Effect of Silicon Microstructure on Stress - Stimulated Creation of Thermal Donors
Abstract
Effect of intentionally created oxygen - related structural defects on generation of thermal donors, TD's, in Cz-Si treated at (670 K) 720 K under enhanced hydrostatic pressure of gas ambient, HP, up to 1.5 GPa (HT - HP treatment) was investigated. The as - grown Cz-Si samples with initial interstitial oxygen content up to 1.2 x 10(exp 18)/cu cm, as well as that pre - annealed at 720 - 1020 K - 10(exp 5) Pa for up to 170 h, indicate strongly HP - dependent increase of electron concentration in the conduction band after the HT - HP treatment at 720 K for 2 - 20 h. This confirms the stress - stimulated creation of TD's. HP - induced creation of TD's was much weaker after pre - annealing at 920 - 1020 K while not detected for the samples containing extended defects (created by 2 - steps pre - annealing at 10(exp 5) Pa, the second step at 1230 - 1420 K). Qualitative explanation of observed phenomena was proposed.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 2001
- Accession Number
- ADP011879
Entities
People
- Andrzej Misiuk
Organizations
- Institute of Electron Technology