Two-Dimensional Model of the Intrinsic Point Defects Behaviour during Cz Silicon Crystals Growth
Abstract
Two-dimensional mathematical model of the intrinsic point defects recombination during Cz growth of dislocation-free silicon single crystals is developed. The results of its verification are compared with the data of the one-dimensional model supposing the 'fast' vacancies and interstitials recombination near the liquid-solid interface. For various growth conditions and with using of the calculated two-dimensional temperature fields in Cz silicon crystals the resulting distributions of these intrinsic point defects in a crystal are analyzed.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 2001
- Accession Number
- ADP011881
Entities
People
- Anatolii I. Prostomolotov
- Natalia A. Verezub