Investigation of System Si-O (SiOx) Behavior in DAC at Submegabar Pressure
Abstract
Extensive experiment studies of the IV elements have been made in recent years. Motivations have included the rich variety of phase and structural transitions. Different SiO(2-x) defects can be created in Czochralski grown silicon, Cz-Si, by appropriate pre-annealing at atmospheric pressure (10(exp 5) Pa). Some date concerning the effect of enhanced hydrostatic pressure on creation of defects in the Si- SiO(2-x) system have been reported for defects-containing Cz-Si subjected to cyclic hydrostatic pressure treatment. An attempt to observe the mentioned hydrostatic pressure-induced effect of massive creation of 'new' defects in Cz-Si with oxygen-related defects was undertaken in this work. The increase of defect concentration in the hydrostatic pressure-treated Cz-Si samples with initially present SiO(2-x) precipitates can be considered as a proof of hydrostatic pressure-induced massive creation of defects on before-created oxygen-related defects. However, in the case of some DAC-treated samples, a misfit dislocation network was not directly proved to be created because of too small sample in comparison to the resolution of the spectroscopy and X-ray methods.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 2001
- Accession Number
- ADP011883
Entities
People
- Anatolii Prudnikov
- Andrzej Misiuk
- Borys M. Efros
- J. Bak-misiuk
- Natalya V. Shishkova
Organizations
- Institute of Electron Technology