Effect of Stress in Defect Transformation in Hydrogen Implanted Silicon and SOI Structures

Abstract

Transformation of defects in hydrogen implanted silicon and silicon-on-insulator structures caused by external pressure of argon ambient (up to 1.5 GPa) at the stage of defect removal in implanted material and high temperature annealing SOI structures is reported. The results are compared to these for crystals annealed at argon atmosphere of ambient pressure. Formation of the new phase crystallites was found in SOI structures annealed at high temperature in conditions of high pressure (1.2 GPa). Small insulations were also observed in hydrogen implanted silicon, which can be patterns of the new phase. Two reasons can cause phase transformation in the top silicon layer of as-bonded SOI structures: high hydrogen concentration and high local strain.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2001
Accession Number
ADP011885

Entities

People

  • A. Misiuk
  • I. V. Antonova
  • J. Bak-misiuk
  • J. Domagala
  • V. P. Popov

Organizations

  • Russian Academy of Sciences

Tags

DTIC Thesaurus Topics

  • Annealing
  • Barometric Pressure
  • Crystallites
  • Crystals
  • Diffraction
  • Electrical Properties
  • Electron Diffraction
  • Electron Microscopy
  • Electronic Mail
  • High Pressure
  • High Resolution
  • High Temperature
  • Materials
  • Measurement
  • Phase Transformations
  • Single Crystals
  • Substrates

Fields of Study

  • Materials science

Readers

  • Combustion science or combustion engineering.
  • Integrated Circuit Design and Technology.
  • Powder metallurgy of Titanium alloys.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Microelectronics - Microelectromechanical Systems