Theory of Behavior of Ionized Hydrogen in GaSb Crystal Structure

Abstract

Using the thermodynamical studies it seems proved that ionized hydrogen acts as amphoteric dopant of GaSb. It is splitting to H(+) (acceptor) and H(-) (donor) and between these two kinds certain equilibrium is created depending on the concentration of acceptor's and donor's impurities in the GaSb material. There is an inclination of such a crystal to maintain the GaSb structure to be isoelectric. This behavior has been studied on undoped and slightly Te-doped GaSb single crystals grown by use of the Czochralski method without encapsulant under a flow of ionized hydrogen. For comparison the studies were repeated under a flow of molecular hydrogen.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2001
Accession Number
ADP011890

Entities

People

  • Bedrich Stepanek
  • Jaroslave Sestak
  • Vera Sestakova

Organizations

  • Czech Academy of Sciences

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Antimony
  • Atmospheres
  • Crystal Growth
  • Crystal Structure
  • Crystals
  • Czech Republic
  • Electrical Properties
  • Elements
  • Equations
  • Gallium Antimonides
  • Hydrogen
  • Impurities
  • Materials
  • Measurement
  • Residuals
  • Single Crystals
  • Temperature Gradients

Fields of Study

  • Materials science

Readers

  • Electrochemical Engineering/ Fuel Cell Technologies
  • Materials Science and Engineering.
  • Semiconductor Device Technology