Crystal Lattice Dynamics of Various Silicon-Carbide Polytypes

Abstract

A valence force field model with an added ionic interaction is applied to an explanation of phonon dispersion curves in 6H-SiC. The phonon dispersion curves in 3C-, 2H-, and 4H-SiC are calculated within the same model. Our results are compared with the published results of ab initio calculations. One can suppose that the present model may be applied for other polytypes of SiC. A phonon contribution to Helmholtz energy is determined for the simplest four polytypes. The results indicate a stability of hexagonal polytypes in relation to the cubic one at high temperatures.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2001
Accession Number
ADP011894

Entities

People

  • Stanislaw Nowak

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Carbides
  • Ceramic Materials
  • Compound Semiconductors
  • Crystal Lattices
  • Crystal Structure
  • Crystals
  • Dispersion Relations
  • Dispersions
  • Dynamics
  • First Principles Calculations
  • Free Energy
  • High Temperature
  • Lattice Dynamics
  • Physical Properties
  • Silicon
  • Silicon Carbide
  • Spectra

Fields of Study

  • Materials science

Readers

  • Marine Propulsion Engineering and Naval Architecture
  • Materials Science and Engineering.
  • Quantum Chemistry